Proceedings of Perovskite Thin Film Photovoltaics (ABXPV)
Publication date: 14th December 2015
Hysteretic behavior is one of the characteristic challenges of perovskite solar cells. It is assumed to be a combined effect of bulk defect properties (ion migration) and optimized contact layers. The traditional TiOx planar layer used for standard architectures is more and more believed to be critical for hysteresis-free behavior and needs a high-temperature annealing procedure.
One newly discussed alternative approach is the use of CdS for interlayers as which is also well-known as buffer for Cu(In,Ga)Se2 solar cells. Its energetic band structure suites well with MAPbI3 and it is easily processible at low temperatures by chemical bath deposition (CBD). The process is also proven to be scalable to square meter sizes.
We hence investigate different series of CdS directly on ITO or FTO with different thicknesses and composition, using also ZnS-CdS mixtures. Additionally the combination of CdS with further stacked electron conductive layers (TiOx, PCBM) is surveyed. It shows out that indeed the hysteretic behavior can strongly be improved by the use of CdS interlayers with nearly no hysteresis after an initial light-bias. Hence efficiencies of up to 10 % are achievable by a generally simple and cheap low-temperature process based on CBD and spin-coating.
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