Influence of the thickness of Nb<sub>2</sub>O<sub>5</sub> blocking layer on the performance of perovskite solar cells

M.A. Zaghete^a, E. Longo^a, Silvia Leticia Fernandes^a^,^c, A. Véron^b, F. A. Nüesch^b, C. F. O. Graeff^c

^aUNESP- Instituto de Química de Araraquara, SP

^bLaboratory for Functional Polymers, Swiss Federal Laboratories for Materials Science and Technology (Empa), Überlandstrasse 129, Dübendorf, 8600, Switzerland

^cUNESP- Faculdade de Cièncias de Bauru, Departamento de Física, SP

^dPOSMAT- Programa de Pós Graduação em Ciència e Tecnologia dos Materiais, Bauru, SP

nanoGe Perovskite Conferences
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV)

Barcelona, Spain, 2016 March 3rd - 4th

Organizers: Emilio Palomares and Nam-Gyu Park

Poster, Silvia Leticia Fernandes, 064
Publication date: 14th December 2015

Hybrid organo-metal halide perovskites are an exciting new class of solar absorber materials. These materials possess intense broad light absorption over the visible spectral range with a band gap of 1.55 eV. Electrons and holes produced in these perovskites exhibit a small effective mass resulting in high carrier mobility. Consequently, these materials offer an extraordinary potential in photovoltaic devices with efficiencies higher than 20%. Typical perovskite solar cells devices incorporate a compact TiO2 buffer layer on top of the transparent conductive oxide electrode. Its role is to prevent recombination of extracted electrons and holes. One promising alternative to replace TiO2 is Nb2O5. Nb2O5 offers some advantages with respect to TiO2 such as efficient electron injection form the perovskite into the oxide and a higher chemical stability. In this work we demonstrate the potential of using Nb2O5 to replace the standard TiO2 buffer layer. We also studied the influence of Nb2O5 thickness layer on the performance of the devices. For thin layers as 50 nm we have found more than12% power conversion efficiency with an open circuit voltage of 0.9 V, a current density of 19 mA/cm2 and a fill factor of 74%. Increasing the thickness of the Nb2O5 layer, we found a decreased in all of the parameters as Voc, Jsc and FF, consequently decreasing the power conversion efficiency.

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