The chemical and electronic properties of inorganic lead-free CsSnX3 perovskites: Impact of SnF2 treatments, halide composition, and deposition route
Thomas Kunze a, Xeniya Kozina a, Claudia Hartmann a, Roberto Félix a, Regan G. Wilks a c, Marcus Bär a c d, David Cahen b, Gary Hodes b, Satyajit Gupta b
a Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Str. 15, Berlin, 12489, Germany
b Department of Materials and Interfaces, Weizmann Institute of Science,, 234 Herzl Street, Rehovot, 7610001
c 3Energy Materials In-Situ Laboratory Berlin (EMIL), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, Berlin, 12489, Germany
d 4Institut für Physik, Brandenburgische Technische Universität Cottbus-Senftenberg, Platz der Deutschen Einheit 1, Cottbus, 03046, Germany
nanoGe Perovskite Conferences
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV17)
València, Spain, 2017 March 1st - 2nd
Organizers: Henk Bolink and David Cahen
Poster, Claudia Hartmann, 053
Publication date: 18th December 2016

Solar cells based on APbX3 halide perovskites with (A = CH3NH3, HC(NH2)2, Cs and X = Br, Cl, I) have shown record efficiencies of up to 21.1%.1 However, there are concerns related to these absorbers, such as the toxicity of Pb and solar cell instability from UV induced damage to the organic component. One route to reduce the toxicity of the absorber material is replacing Pb by Sn. Moreover, completely substituting the organic cation(s) with (inorganic) Cs can improve device longevity.2 Incorporating these modifications leads to a class of inorganic Pb-free perovskites – CsSnX3 – as promising alternative absorbers. Devices based on CsSnX3 have thus far exhibited only relatively low efficiencies, possibly due to the oxidization from Sn+2 to Sn+4 producing deep defects in the absorber.3 Adding SnF2 during preparation inhibits this oxidation,4 however, the exact mechanism behind the SnF2 treatment, in particular its impact on the electronic structure, is not yet fully understood. Another approach to preventing Sn oxidation is changing the deposition environment/technique. Sn is more likely to oxidize when CsSnX3 is prepared wet-chemically (e.g., via spin-coating) than if it is prepared by thermal evaporation under vacuum conditions. For the latter, depositing the absorber in ultra-high vacuum (UHV) allows preparation of films without Sn oxidation.

To identify the roles of the SnF2 treatment, halide composition, and deposition route, thin films of (spin-coated) CsSnBr3/compact-TiO2/FTO/glass and (UHV deposited) CsSnCl3/Mo/glass were characterized by hard x-ray photoelectron spectroscopy (HAXPES). We find improved substrate coverage when SnF2 is added to the precursor solution or when the absorber is deposited via thermal evaporation in UHV. Furthermore, we can identify different chemical species depending on the preparation process. Our measurements also reveal an impact of the SnF2 treatments on the perovskite electronic structure, i.e., it enhances the density of states close to the valence band maximum (VBM). Also, we find a VBM shift of approximately 1 eV away from the Fermi level if CsSnCl3 is compared to CsSnBr3.

In our contribution, we will discuss in detail the chemical and electronic properties of inorganic Pb-free perovskites. These findings can lead to insights required to identify pathways for efficiency improvements of solar devices based on solution- and thermal-deposition-processed CsSnX3 perovskite absorber layers.

1Saliba et al., Energy Environ. Sci.9 (2016)1989.

2Kulbak et al., J. Phys. Chem. Lett. 7 (2015) 167.

3Chung et al., J. Am. Chem. Soc. 134 (2012) 8579.

4Kumar et al., Adv. Mater. 26 (2014) 7122.



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