Strongly Emissive Perovskite Nanocrystals Inks for High Voltage Solar Cells
Liberato Manna a, Mirko Prato a, Francesco Di Stasio a, Francisco Palazon a, Quinten A. Akkerman a b, Prachi Rastogi a b, Giovanni Bertoni a e, James M. Ball c, Annamaria Petrozza c, Marina Gandini c d
a Istituto Italiano di Tecnologia, Genova
b Università degli Studi di Genova, Via Dodecaneso, 31, 16146, Genova
c Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, via Giovanni Pascoli 70/3, 20133, Milan, Italy, Italy
d Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci, 32, Milano, 20133, Italy
e IMEM-CNR, , Parco Area delle Scienze 37a, I-43124 Parma, Italy
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster, Quinten A. Akkerman, 108
Publication date: 7th November 2016

Lead halide based perovskite semiconductors have recently gained wide interest in solid state photovoltaic devices with impressive power conversion efficiencies (now above 20%).[1] While offering a relatively simple and low cost processability, the poor control of their growth processes in thin films represents a major roadblock. Inks based on colloidal suspensions of nanoparticles (NCs) could lead to a better control of the material quality and device reliability, but current NC synthesis methods use bulky, high-boiling point ligands and solvents, limiting their use in applications.[2,3] We report a fast, room-temperature synthesis of inks based on CsPbBr3 perovskite NCs using short, low boiling-point ligands and solvents.[4] Requiring no post-synthesis treatments, the inks are directly used to fabricate thin films of high optoelectronic quality, exhibiting photoluminescence quantum yields higher than 30% and an amplified spontaneous emission threshold as low as 1.5 µJ/cm2. The robustness of such properties is demonstrated by the fabrication of the first nanocrystal-based solar cells, with a density of short circuit current higher than 6 mA/cm2 and open circuit voltages as high as 1.5 V, close to the maximum theoretical values achievable. 

References:

[1] N. J. Jeon, et al., Nat Mater (2014) 13, 897-903

[2] L. Protesescu, et al., Nano Letters (2015), 15, 3692-3696

[3] Q. A. Akkerman, et al., J. Am. Chem. Soc. (2015), 137, 10276-10281

[4] Q. A. Akkerman, et al., submitted



© Fundació Scito
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info